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1

Aphorismes de quelque chose de l'amour (Cioran, Godard)

Journal:

Year:

2012

Language:

french

File:

PDF, 129 KB

french, 2012

2

Calcium chloride hexahydrate-ammonium chloride binary solutions: a DSC study

J. Guion, M. Laugt, M. Teisseire

Journal:

Thermochimica Acta

Year:

1989

Language:

english

File:

PDF, 466 KB

english, 1989

3

GaN epitaxial growth on sapphire (0 0 0 1): the role of the substrate nitridation

N. Grandjean, J. Massies, Y. Martinez, P. Vennéguès, M. Leroux, M. Laügt

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 900 KB

english, 1997

4

Some benefits of Fe doped less dislocated GaN templates for AlGaN/GaN HEMTs grown by MOVPE

Z. Bougrioua, M. Azize, P. Lorenzini, M. Laügt, H. Haas

Journal:

physica status solidi (a)

Year:

2005

Language:

english

File:

PDF, 329 KB

english, 2005

5

Microstructural analysis of III–V nitrides grown on 6H–SiC by metal–organic vapour phase epitaxy (MOVPE)

Lahreche, H, Vaille, M, Vennéguès, P, Laügt, M, Beaumont, B, Gibart, P

Journal:

Diamond and Related Materials

Year:

2000

Language:

english

File:

PDF, 341 KB

english, 2000

6

L’éducation thérapeutique du patient atteint de BPCO : le discours du médecin généraliste

Foucaud, J., Versel, M., Laügt, O., Taytard, A.

Journal:

Revue des Maladies Respiratoires

Year:

2005

File:

PDF, 135 KB

2005

7

[IEEE 2005 Conference on High Density Microsystem Design and Packaging and Component Failure Analysis - Shanghai, China (2005.6.27-2005.6.27)] 2005 Conference on High Density Microsystem Design and Packaging and Component Failure Analysis - Optimization of lead free solder paste for robust process and reliable solder joint.

Laugt, Anne-marie, Evers, P.C.J., Caban, D, Wilczek, P., Spilka, G

Year:

2006

Language:

english

File:

PDF, 5.16 MB

english, 2006

8

America in Time: Aphoristic Writing in Jean Baudrillard's America

Laügt, Élodie

Journal:

Year:

2012

Language:

english

File:

PDF, 998 KB

english, 2012

9

Why Emma Bovary Had to be Killed on Screen: From Flaubert to Chabrol via Ranciere

Journal:

Forum for Modern Language Studies

Year:

2013

Language:

english

File:

PDF, 117 KB

english, 2013

10

[IEEE 2015 IEEE 17th Electronics Packaging and Technology Conference (EPTC) - Singapore (2015.12.2-2015.12.4)] 2015 IEEE 17th Electronics Packaging and Technology Conference (EPTC) - Solder paste corrosivity assesment: Bono test

Puechagut, Celine, Laugt, Anne-Marie, Guene, Emmanuelle, Anisko, Richard

Year:

2015

Language:

english

File:

PDF, 596 KB

english, 2015

11

« Rendez-vous manqués » : de qui, de quoi la poésie est-elle (la) contemporaine? (Mallarmé, Rancière)

Journal:

L'Esprit Créateur

Year:

2015

Language:

french

File:

PDF, 72 KB

french, 2015

12

Metal Organic Vapour Phase Epitaxy (MOVPE) Growth of GaN(n)/SiC(p) Heterostructures

H. Lahrèche, M. Vaille, B. Beaumont, M. Laügt, P. Vennéguès, P. Gibart

Journal:

physica status solidi (a)

Year:

1999

Language:

english

File:

PDF, 171 KB

english, 1999

13

Effects of Built-in Polarization Field on the Optical Properties of AlGaN/GaN Quantum Wells

N. Grandjean, B. Damilano, S. Dalmasso, M. Leroux, M. Laügt, J. Massies

Journal:

physica status solidi (a)

Year:

1999

Language:

english

File:

PDF, 217 KB

english, 1999

14

2D versus 3D Growth Mode in ZnO Layers Grown by Plasma-Enhanced Molecular Beam Epitaxy on (0001) Sapphire

F. Vigué, C. Deparis, P. Vennéguès, S. Vézian, M. Laügt, P. Lorenzini, C. Morhain, F. Raymond, J. Guion, J.P. Faurie

Journal:

physica status solidi (b)

Year:

2002

Language:

english

File:

PDF, 92 KB

english, 2002

15

Optical Characterization of AlxGa1—xN Alloys (x < 0.7) Grown on Sapphire or Silicon

M. Leroux, S. Dalmasso, F. Natali, S. Helin, C. Touzi, S. Laügt, M. Passerel, F. Omnes, F. Semond, J. Massies, P. Gibart

Journal:

physica status solidi (b)

Year:

2002

Language:

english

File:

PDF, 109 KB

english, 2002

16

Crack-Free Thick GaN Layers on Silicon (111) by Metalorganic Vapor Phase Epitaxy

E. Feltin, B. Beaumont, M. Laügt, P. de Mierry, P. Vennéguès, M. Leroux, P. Gibart

Journal:

physica status solidi (a)

Year:

2001

Language:

english

File:

PDF, 148 KB

english, 2001

17

Study of (Al,Ga)N Bragg Mirrors Grown on Al2O3(0001) and Si(111) by Metalorganic Vapor Phase Epitaxy

H.P.D. Schenk, E. Feltin, P. Vennéguès, O. Tottereau, M. Laügt, M. Vaille, B. Beaumont, P. de Mierry, P. Gibart, S. Fernández, F. Calle

Journal:

physica status solidi (a)

Year:

2001

Language:

english

File:

PDF, 129 KB

english, 2001

18

Molecular beam epitaxy of GaSbAlxGa1 − xSb quantum well structures

J. Massies, M. Leroux, Y. Martinez, P. Vennegues, S. Laügt

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 694 KB

english, 1996

19

Selective growth of GaAs and Al0.35Ga0.65As on GaAs patterned substrates by HCl assisted low pressure metalorganic vapour phase epitaxy

G. Nataf, M. Leroux, S.M. Laügt, P. Gibart

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 535 KB

english, 1996

20

Comparative study between electrical, optical and structural properties of annealed heavily carbon doped GaAs

A. Rebey, Z. Chine, W. Fathallah, B. El Jani, E. Goovaerts, S. Laugt

Journal:

Microelectronics Journal

Year:

2004

Language:

english

File:

PDF, 378 KB

english, 2004

21

AlGaN/GaN/AlGaN DH-HEMTs grown by MBE on Si(1 1 1)

Y. Cordier, F. Semond, M. Hugues, F. Natali, P. Lorenzini, H. Haas, S. Chenot, M. Laügt, O. Tottereau, P. Vennegues, J. Massies

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 216 KB

english, 2005

22

Hexagonal c-axis GaN layers grown by metalorganic vapor-phase epitaxy on Si(0 0 1)

Sylvain Joblot, Eric Feltin, Emmanuel Beraudo, Philippe Vennéguès, Mathieu Leroux, Franck Omnès, Marguerite Laügt, Yvon Cordier

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 684 KB

english, 2005

23

Alumina-rich spinel: A new substrate for the growth of high quality GaN-based light-emitting diodes

F. Tinjod, P. de Mierry, D. Lancefield, Z. Bougrioua, S. Laügt, O. Tottereau, P. Lorenzini, S. Chenot, E. Virey, M.R. Kokta, J.L. Stone-Sundberg, D. Pauwels

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 440 KB

english, 2005

24

Growth of non-polar ZnO/(Zn,Mg)O quantum well structures on R-sapphire by plasma-assisted molecular beam epitaxy

J.-M. Chauveau, D.A. Buell, M. Laügt, P. Vennéguès, M. Teisseire-Doninelli, S. Berard-Bergery, C. Deparis, B. Lo, B. Vinter, C. Morhain

Journal:

Journal of Crystal Growth

Year:

2007

Language:

english

File:

PDF, 279 KB

english, 2007

25

(Zn, Mg)O/ZnO-based heterostructures grown by molecular beam epitaxy on sapphire: Polar vs. non-polar

J.-M. Chauveau, C. Morhain, M. Teisseire, M. Laügt, C. Deparis, J. Zuniga-Perez, B. Vinter

Journal:

Microelectronics Journal

Year:

2009

Language:

english

File:

PDF, 668 KB

english, 2009

26

Characterization by X-ray diffraction and electron microscopy of GaInAs and GaAsN single layers and quantum wells grown on GaAs

H Varlet, C Curtil, C Alfonso, N Burle, A Arnoult, C Fontaine, M Laügt

Journal:

Physica E: Low-dimensional Systems and Nanostructures

Year:

2004

Language:

english

File:

PDF, 911 KB

english, 2004

27

Structural and electronic properties of ZnMgO/ZnO quantum wells

C. Morhain, X. Tang, M. Teisseire-Doninelli, B. Lo, M. Laügt, J.-M. Chauveau, B. Vinter, O. Tottereau, P. Vennéguès, C. Deparis, G. Neu

Journal:

Superlattices and Microstructures

Year:

2005

Language:

english

File:

PDF, 2.02 MB

english, 2005

28

Growth by molecular beam epitaxy of AlGaN/GaN high electron mobility transistors on Si-on-polySiC

Y. Cordier, S. Chenot, M. Laügt, O. Tottereau, S. Joblot, F. Semond, J. Massies, L. Di Cioccio, H. Moriceau

Journal:

Superlattices and Microstructures

Year:

2006

Language:

english

File:

PDF, 361 KB

english, 2006

29

Optimisation of AlN and GaN growth by metalorganic vapour-phase epitaxy (MOVPE) on Si (1 1 1)

H Lahrèche, P Vennéguès, O Tottereau, M Laügt, P Lorenzini, M Leroux, B Beaumont, P Gibart

Journal:

Journal of Crystal Growth

Year:

2000

Language:

english

File:

PDF, 1.15 MB

english, 2000

30

Wide-band-gap ZnMgBeSe alloys grown onto GaAs by molecular beam epitaxy

E. Tournié, F. Vigué, M. Laügt, J.-P. Faurie

Journal:

Journal of Crystal Growth

Year:

2001

Language:

english

File:

PDF, 159 KB

english, 2001

31

Investigations by high-resolution X-ray diffraction (HRXRD) and transmission electron microscopy (TEM) of (BeTe/ZnSe) superlattices grown by molecular beam epitaxy onto GaAs buffer epilayer

V Bousquet, M Laügt, P Vennéguès, E Tournié, J.-P Faurie

Journal:

Journal of Crystal Growth

Year:

1999

Language:

english

File:

PDF, 265 KB

english, 1999

32

An X-ray and TEM study of inhomogeneous ordering in AlxGa1−xN layers grown by MOCVD

M. Laügt, E. Bellet-Amalric, P. Ruterana, F. Omnès

Journal:

Journal of Physics and Chemistry of Solids

Year:

2003

Language:

english

File:

PDF, 133 KB

english, 2003

33

An Ant Colony Optimization algorithm to solve a 2-machine bicriteria flowshop scheduling problem

Vincent T'kindt, Nicolas Monmarché, Fabrice Tercinet, Daniel Laügt

Journal:

European Journal of Operational Research

Year:

2002

Language:

english

File:

PDF, 162 KB

english, 2002

34

Photoluminescence and absorption spectroscopy of silicon-doped InGaN layers

H.P.D. Schenk, M. Leroux, P. de Mierry, M. Laügt, F. Omnès, P. Gibart

Journal:

Materials Science and Engineering: B

Year:

2001

Language:

english

File:

PDF, 169 KB

english, 2001

35

Stress and density of defects in Si-doped GaN

Z. Chine, A. Rebey, H. Touati, E. Goovaerts, M. Oueslati, B. El Jani, S. Laugt

Journal:

physica status solidi (a)

Year:

2006

Language:

english

File:

PDF, 684 KB

english, 2006

36

Strain and microstructure in Fe-doped GaN layers grown by low pressure metalorganic vapour phase epitaxy

M. Azize, M. Leroux, M. Laugt, P. Gibart, Z. Bougrioua

Journal:

physica status solidi (a)

Year:

2006

Language:

english

File:

PDF, 192 KB

english, 2006

37

Reduction of stacking faults in (110) and (112) GaN films by ELO techniques and benefit on GaN wells emission

Z. Bougrioua, M. Laügt, P. Vennéguès, I. Cestier, T. Gühne, E. Frayssinet, P. Gibart, M. Leroux

Journal:

physica status solidi (a)

Year:

2007

Language:

english

File:

PDF, 517 KB

english, 2007

38

Ordering in undoped hexagonal AlxGa1–xN grown on sapphire (0001) with 0.09 < x < 0.247

M. Laügt, E. Bellet-Amalric, P. Ruterana, F. Omnès

Journal:

physica status solidi (b)

Year:

2003

Language:

english

File:

PDF, 730 KB

english, 2003

39

Ordering in undoped hexagonal AlxGa1–xN grownon sapphire (0001) with 0.09 < x < 0.247

M. Laügt, E. Bellet-Amalric, P. Ruterana, F. Omnès

Journal:

physica status solidi (b)

Year:

2003

File:

PDF, 598 KB

2003

40

Structural evaluation of GaN/sapphire grown by epitaxial lateral overgrowth by X-ray microdiffraction

M. Drakopoulos, M. Laügt, T. Riemann, B. Beaumont, P. Gibart

Journal:

physica status solidi (b)

Year:

2006

Language:

english

File:

PDF, 292 KB

english, 2006

41

Structural evaluation of GaN/sapphire grown by epitaxial lateral overgrowth by X-ray microdiffraction

M. Drakopoulos, M. Laügt, T. Riemann, B. Beaumont, P. Gibart

Journal:

physica status solidi (b)

Year:

2006

File:

PDF, 440 KB

2006

42

Growth of wurtzite-GaN on silicon (100) substrate by molecular beam epitaxy

S. Joblot, F. Semond, F. Natali, P. Vennéguès, M. Laügt, Y. Cordier, J. Massies

Journal:

physica status solidi (c)

Year:

2005

Language:

english

File:

PDF, 254 KB

english, 2005

43

Realization of AlGaN/GaN HEMTs on Si-on-polySiC substrates

Yvon Cordier, Sébastien Chenot, Marguerite Laügt, Olivier Tottereau, Sylvain Joblot, Fabrice Semond, Jean Massies, Léa Di Cioccio, Hubert Moriceau

Journal:

physica status solidi (c)

Year:

2007

Language:

english

File:

PDF, 198 KB

english, 2007

44

Growth and characterization of A-plane ZnO and ZnCoO based heterostructures

J.-M. Chauveau, C. Morhain, B. Lo, B. Vinter, P. Vennéguès, M. Laügt, D. Buell, M. Tesseire-Doninelli, G. Neu

Journal:

Applied Physics A: Materials Science & Processing

Year:

2007

Language:

english

File:

PDF, 382 KB

english, 2007

45

In situ optical monitoring of metalorganic vapor phase epitaxy growth of C-doped GaAs

A. Rebey, B. El Jani, A. Leycuras, S. Laugt, P. Gibart

Journal:

Applied Physics A: Materials Science & Processing

Year:

1999

Language:

english

File:

PDF, 419 KB

english, 1999

46

Structure cristalline de Cu4(PO4)2O

M. Brunel-Laügt, A. Durif, J.C. Guitel

Journal:

Journal of Solid State Chemistry

Year:

1978

File:

PDF, 485 KB

1978

47

Critical examination and experimental determination of melting enthalpies and entropies of salt hydrates

J. Guion, J.D. Sauzade, M. Laügt

Journal:

Thermochimica Acta

Year:

1983

Language:

english

File:

PDF, 673 KB

english, 1983

48

GaAs epitaxy by chemical vapour transport under high, earth and low-gravity conditions

Véronique Chevrier, Jean-Claude Launay, Sophie Laügt, Oudomsack Viraphong, Pierre Gibart

Journal:

Journal of Crystal Growth

Year:

1998

Language:

english

File:

PDF, 2.32 MB

english, 1998

49

Etude des systemes Cu(PO3)2/1bTlPO3 et Cu(PO3)2/1bRbPO3 donnees cristallographiques sur CuTl(PO3)3 et CuRb(PO3)3

Mlle M. Laügt, M. Scory, A. Durif

Journal:

Materials Research Bulletin

Year:

1968

File:

PDF, 233 KB

1968

50

Etude du systeme metaphosphate de cesium metaphosphate de cuivre

Marguerite Laügt, Claude Martin

Journal:

Materials Research Bulletin

Year:

1972

File:

PDF, 315 KB

1972

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